Learn · Cryogenic Electronics for Quantum Computing
Lecture 14 of 68Week 2
Second Order Effects - II
Prof. Sudeb Dasgupta · IIT Roorkee
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- Cryogenic Electronics for Quantum Computing, IIT Roorkee (at NPTEL)
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All the lectures
- Principles of Quantum Mechanics
- Principles of Quantum Mechanics-II
- Schrodinger’s Wave Equation
- Schrodinger’s Wave Equation-II
- Formation of Energy Bands, The Kronig–Penney Model, K Space Diagram
- Electrical Conduction in Solids-The Energy Band and the Bond Model, Drift Current, Electron Effective Mass
- Density of States Function, Statistical Mechanics -I
- DOS - II
- Basic MOSFET Structure, symbol, and working as a Switch
- MOSFET Operation- Depletion, Accumulation, and Inversion
- MOSFET I/V Characteristics-Threshold voltage, I/V Characteristics, Transconductance
- MOSFET I/V and Threshold Voltage- II
- Second-Order Effects – I
- Second Order Effects - II
- Introduction to Cryogenics in Electronics
- Cryogenic Coolant/Fluids used
- Transition in Properties of materials with variation in Temperature
- Transition in Properties of materials with variation in Temperature - II
- Semiconductor devices at Room Temperature @ 300 K
- Semiconductor devices at Low Temperature@ below 150 K and 77K
- Change in Bandgap at Low Temperature - I
- Change in Bandgap at Low Temperature - II
- Change in Intrinsic Carrier concentration
- Lowering in the level of Fermi Energy
- Effect of Freeze-out on dopant atom concentration
- Effect of Freeze-out on Dopant Atom Concentration - II & Complete Effect of Overall Phenomenon
- Introduction to Modelling of Cryo-MOS Device
- Device Performance Modelling at Cryogenic Temperatures
- Semiconductor Device Equations at Low Temperature
- Incomplete Ionization Models
- Mobility Models: Scattering effect
- Change in Threshold Voltage
- Change in Threshold Voltage: II
- Effect on Mobility
- Effect on leakage and saturation current
- Kink-observed at higher VDS due to Impact Ionization
- Subthreshold Swing and Transconductance - I
- Subthreshold Swing and Transconductance - II
- Introduction to MOS Capacitance
- Traps and Defects at Cryogenic Temperatures
- C-V Characteristics: High-Frequency and Low-Frequency Capacitance
- Characterization Techniques and Cryogenic MOS Capacitance Modeling
- Noise Performance and Flicker Noise
- Cryo-Analog to Digital Converter
- Cryo-Low Noise Amplifiers
- Multiplexers and Circulators
- Cryo-Oscillators
- Cryo-Power Management Circuits and Sensors and Sensors Interfaces
- Introduction to Qubits
- Properties of Qubits
- Interfacing Quantum Processor with Classical Controllers
- Quantum Entanglement and Quantum Communication
- Single Qubit System
- Extension to Two-Qubit systems and Multiplexing DC and I/O signal for 4 qubits
- Multiplexing DC and I/O signal for 4 qubits
- Multiplexing techniques based on FDMA, TDMA, SDMA
- Introduction to Quantum Metrology and Quantum Sensing
- SPADS and Challenges to Quantum Technology
- Qubit readout front-end circuits for (a) Spin qubit (b)Transmon qubit
- Sensing the Qubits- Microwave Technique
- Characterization and Modelling of 22 nm FDSOI Cryogenic RF CMOS
- Modelling of 22 nm FDSOI Cryogenic RF CMOS –Part -II
- Modelling of 22 nm FDSOI Cryogenic RF CMOS –Part -III
- Parasitic Capacitance in Nanosheet FETs
- Performance Perspective of Gate All Around Double Nanosheet
- Nanosheet: Part - I
- Nanosheet: Part - II
- Nanosheet: Part - III