Course11710772468 lectures
Cryogenic Electronics for Quantum Computing
Prof. Sudeb Dasgupta · IIT Roorkee
About
This lecture series starts with basics of MOS Device Structure and Physics followed by Cryogenics at Device level and further leads to its implication on Circuit level. The intermediate journey takes the student to Modelling of Cryo-device, and Quantum Qubits and Architecture of Interface Configurable Hardware Components. One of the salient features of the lectures are its synthesis or design-oriented approach, which helps the student to find the solution to generic problems for certain specs of input data and output requirements. Problem solving in the class and through assignments are essential for getting a ‘hold’ on the subject. This lecture series takes care of the same. I believe that the students/learners will be greatly benefitted by this experience.
Intended audience: Undergraduate (Final year- Elective) /Postgraduate/PhD/ VLSI Industry Working Professional
Prerequisites: 1. Basic Mathematics 2. Basic semiconductor
Lectures
Week 1
- Principles of Quantum Mechanics
- Principles of Quantum Mechanics-II
- Schrodinger’s Wave Equation
- Schrodinger’s Wave Equation-II
- Formation of Energy Bands, The Kronig–Penney Model, K Space Diagram
- Electrical Conduction in Solids-The Energy Band and the Bond Model, Drift Current, Electron Effective Mass
- Density of States Function, Statistical Mechanics -I
- DOS - II
Week 2
- Basic MOSFET Structure, symbol, and working as a Switch
- MOSFET Operation- Depletion, Accumulation, and Inversion
- MOSFET I/V Characteristics-Threshold voltage, I/V Characteristics, Transconductance
- MOSFET I/V and Threshold Voltage- II
- Second-Order Effects – I
- Second Order Effects - II
Week 3
- Introduction to Cryogenics in Electronics
- Cryogenic Coolant/Fluids used
- Transition in Properties of materials with variation in Temperature
- Transition in Properties of materials with variation in Temperature - II
- Semiconductor devices at Room Temperature @ 300 K
- Semiconductor devices at Low Temperature@ below 150 K and 77K
Week 4
- Change in Bandgap at Low Temperature - I
- Change in Bandgap at Low Temperature - II
- Change in Intrinsic Carrier concentration
- Lowering in the level of Fermi Energy
- Effect of Freeze-out on dopant atom concentration
- Effect of Freeze-out on Dopant Atom Concentration - II & Complete Effect of Overall Phenomenon
Week 5
- Introduction to Modelling of Cryo-MOS Device
- Device Performance Modelling at Cryogenic Temperatures
- Semiconductor Device Equations at Low Temperature
- Incomplete Ionization Models
- Mobility Models: Scattering effect
Week 6
- Change in Threshold Voltage
- Change in Threshold Voltage: II
- Effect on Mobility
- Effect on leakage and saturation current
- Kink-observed at higher VDS due to Impact Ionization
- Subthreshold Swing and Transconductance - I
- Subthreshold Swing and Transconductance - II
Week 7
- Introduction to MOS Capacitance
- Traps and Defects at Cryogenic Temperatures
- C-V Characteristics: High-Frequency and Low-Frequency Capacitance
- Characterization Techniques and Cryogenic MOS Capacitance Modeling
- Noise Performance and Flicker Noise
Week 8
- Cryo-Analog to Digital Converter
- Cryo-Low Noise Amplifiers
- Multiplexers and Circulators
- Cryo-Oscillators
- Cryo-Power Management Circuits and Sensors and Sensors Interfaces
Week 9
- Introduction to Qubits
- Properties of Qubits
- Interfacing Quantum Processor with Classical Controllers
- Quantum Entanglement and Quantum Communication
Week 10
- Single Qubit System
- Extension to Two-Qubit systems and Multiplexing DC and I/O signal for 4 qubits
- Multiplexing DC and I/O signal for 4 qubits
- Multiplexing techniques based on FDMA, TDMA, SDMA
Week 11
- Introduction to Quantum Metrology and Quantum Sensing
- SPADS and Challenges to Quantum Technology
- Qubit readout front-end circuits for (a) Spin qubit (b)Transmon qubit
- Sensing the Qubits- Microwave Technique
Week 12
- Characterization and Modelling of 22 nm FDSOI Cryogenic RF CMOS
- Modelling of 22 nm FDSOI Cryogenic RF CMOS –Part -II
- Modelling of 22 nm FDSOI Cryogenic RF CMOS –Part -III
- Parasitic Capacitance in Nanosheet FETs
- Performance Perspective of Gate All Around Double Nanosheet
- Nanosheet: Part - I
- Nanosheet: Part - II
- Nanosheet: Part - III
Syllabus and materials
At NPTEL, as the course publishes them.
Credits and licence
- Institution
- IIT Roorkee
- Department
- Electrical Engineering
- Teacher
- Prof. Sudeb Dasgupta
- Level
- Undergraduate
- Language
- English
- Subjects
- Engineering
- Source
- NPTEL
- Licence
- CC BY-NC-SA, as NPTEL states it. Non-commercial use only. NPTEL's terms
- Attribution
- NPTEL states: "Distributed under Creative Commons Attribution-ShareAlike / CC BY - NC - SA", beside a BY-NC-SA badge.
- Who can watch
- NPTEL gives no rating. Invisible Network shows it to Tweens profiles and older, judged from what the source says about it. How courses are placed