Lecture 33 of 40VLSI Technology
Problems in LOCOS + Trench isolation
Prof. Prof. Nandita Dasgupta · IIT Madras
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All the lectures
- Introduction on VLSI Design
- Bipolar Junction Transistor Fabrication
- MOSFET Fabrication for IC
- Crystal Structure of Si
- Crystal Structure contd
- Defects in Crystal + Crystal growth
- Crystal growth Contd + Epitaxy I
- Epitaxy II - Vapour phase Epitaxy
- Epitaxy III - Doping during Epitaxy
- Molecular beam Epitaxy
- Oxidation I - Kinetics of Oxidation
- Oxidation II Oxidation rate constants
- Oxidation III - Dopant Redistribution
- Oxidation IV - Oxide Charges
- Diffusion I - Theory of Diffusion
- Diffusion II - Infinite Source
- Diffusion III - Actual Doping Profiles
- Diffusion IV Diffusion Systems
- Ion - Implantation Process
- Ion - Implantation Process
- Annealing of Damages
- Masking during Implantation
- Lithography - I
- Lithography - II
- Wet Chemical Etching
- Dry Etching
- Plasma Etching Systems
- Etching of Si,Sio2,SiN and other materials
- Plasma Deposition Process
- Metallization - I
- Problems in Aluminium Metal contacts
- IC BJT - From junction isolation to LOCOS
- Problems in LOCOS + Trench isolation
- More about BJT Fabrication and Realization
- Circuits + Transistors in ECL Circuits
- MOSFET I - Metal gate vs. Self-aligned Poly-gate
- MOSFET II Tailoring of Device Parameters
- CMOS Technology
- Latch - up in CMOS
- BICMOS Technology