Learn · Nanoelectronics: Devices and Materials
Lecture 26 of 41Germanium and Compound Semiconductor Nano MOSFETs
Germanium as an alternate to silicon for high performance MOSFETs and the challenges in Germanium Technology
Dr. Navakanta Bhat, Dr. S.A. Shivashankar and Prof. K.N. Bhat · IISc Bangalore
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- Nanoelectronics: Devices and Materials, IISc Bangalore (at NPTEL)
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All the lectures
- Introduction to Nanoelectronics
- CMOS Scaling Theory
- Short Channel Effects
- Subthreshold Conduction
- Drain Induced Barrier Lowering
- Channel and Source/Drain Engineering
- CMOS Process Flow
- Gate oxide scaling and reliability
- High-k gate dielectrics
- Metal gate transistor
- Industrial CMOS Technology
- Ideal MOS C-V Characteristics
- Effect of non idealities on C-V
- MOS Parameter Extraction from C-V Characteristics
- MOS Parameter Extraction from I-V Characteristics
- MOSFET Analysis, sub-threshold swing “S”
- Interface state density effects on “S”. Short Channel Effects (SCE) and Drain Induced Barrier Lowering (DIBL)
- Velocity Saturation, Ballistic transport, and Velocity Overshoot Effects and Injection Velocity
- SOI Technology and comparisons with Bulk Silicon CMOS technology
- SOI MOSFET structures, Partially Depleted (PD)and Fully Depleted (FD) SOIMOSFETs
- FD SOI MOSFET: Operation Modes and Threshold Voltages and Electric Fields
- Sub-threshold Slope & SCE suppression in FD SOI MOSFET, Volume Inversion and Ultra thin (UTFD) SOI MOSFET and quantization Effect, FINFET
- Need for MS contact Source/Drain Junction in Nano scale MOSFETs
- Rectifying and Ohmic contacts and challenges in MS unction source drain MOSFET Technology
- Effect of Interface states and Fermi level pinning on MS contacts on Si and passivation techniques for MS S/D MOSFETS
- Germanium as an alternate to silicon for high performance MOSFETs and the challenges in Germanium Technology
- Germanium MOSFT technology and recent results on surface passivated Ge MOSFETS
- Compound semiconductors and hetero junction FETsfor high performance
- GaAs MESFETs: Enhancement and depletion types . Velocity Overshoot effcts in GaAs MESFETs
- Hetero-junctions and High Electron Mobility Transistors (HEMT)
- Introduction to Nanomaterials
- Basic Principles of Quantum Mechanics
- Basic Principles of Quantum Mechanics contd.
- Energy bands in crystalline solids
- Quantum structures and devices
- Crystal growth and nanocrystals
- Nanocrystals and nanostructured thin films
- Nanowires and other nanostructures
- Carbon Nanostructures and CVD
- Atomic layer deposition (ALD)
- Characterisation of nanomaterials