Learn · High Speed Devices and Circuits
Lecture 6 of 41High Speed Devices and Circuits
Crystal structures in GaAs
Prof. K.N. Bhat · IIT Madras
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- High Speed Devices and Circuits, IIT Madras (at NPTEL)
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All the lectures
- Introduction to Basic concepts
- Requirements for high speed circuits, devices and materials
- Classification and properties of semiconductor devices
- Ternary compound semiconductors and their applications
- Ternary compound semiconductors and their applications(contd.)
- Crystal structures in GaAs
- Dopants and impurities in GaAs and InP
- Brief Overview of GaAs Technology for High Speed Devices
- Epitaxial Techniques for GaAs and high speed devices
- MBE and LPE for GaAs Epitoxy
- GaAs and InP devices for Microelectronics
- Metal Semiconductor contacts for MESFET
- Metal Semiconductor contacts for MESFET(contd)
- Metal Semiconductor contacts for MESFET(Contd)
- Ohmic contacts on semiconductors
- Fermi level pinning, I V characteristics of Schottky Barrier Diodes
- Schottky Barrier Diodes I V characteristics of Non idealities -1
- Schottky Barrier Diodes I V characteristics of Non idealities -1
- Causes of Non idealities in the Schottky Barrier Diodes (I V characteristics)
- MESFET operations and I V characteristics
- MESFET I V characteristics Shockley's Model
- MESFET Shockley's Model and velocity saturation effect
- MESFET velocity saturation effect on drain current saturation
- MESFET : Drain current saturation Ids due to velocity saturation
- MESFET : Effects of channel length and gate length on IDS and gm
- MESFET : Effects of velocity saturation and velocity field characteristics
- MESFET : Effects of velocity field characteristics - Overshoot effects
- MESFET : Velocity overshoot effect and self aligned MESFET SAINT
- Self Aligned MESFET SAINT Threshold Voltage and Sub Threshold current
- Hetero junctions
- Hetero junctions and high electron Mobility Transistor(HEMT)
- Hetero junctions and high electron Mobility Transistor(HEMT) (Contd.)
- High Electron Mobility Transistor
- HEMT off voltage, I-V characteristics and trans conductance
- I-V characteristics and trans conductance and optimization
- Indium phosphide based HEMT
- Pseudomorphic HEMT and Hetrojunction Bipolar Transistors
- Hetero junction Bipolar Transistors (HBT)
- Hetero junction Bipolar Transistors (HBT) (Contd.)
- Hetero junction Bipolar Transistors (HBT) (Contd.)
- Hetero junction Bipolar Transistors(HBT)-4(Contd)