Learn · Basics of Semiconductor Microwave Devices
Lecture 36 of 62week-08
Lec DB 36 Parasitic resistances and capacitances in nanoscale MOSFETs.
Prof. Digbijoy N. Nath · IISc Bangalore
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- Basics of Semiconductor Microwave Devices, IISc Bangalore (at NPTEL)
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- CC BY-NC-SA, as NPTEL states it. Non-commercial use only.
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All the lectures
- Lec 01 An Introduction to the course & outline of the course
- Lec 02 - Historical overview of the development of microwave devices
- Lec 03 Applications of semiconductor microwave devices
- Lec 04 Applications of semiconductor microwave devices (contd.)
- Lec 05 Heterojunction device physics
- Lec 06 - Heterojunction device physics (contd.) and III-nitrides
- Lec 07 - III-nitrides and polarization
- Lec 08 - III-nitride high electron mobility transistors
- Lec 09 - Varactors and Schottky multipliers
- Lec 10 - Varactors and Schottky multipliers (contd).
- Lec 11 Diodes for microwave applications
- Lec 12 IMPATT diode
- Lec 13 Tunnel diodes and Introduction to Gunn diodes
- Lec 14 Gunn diode and its modes
- Lec 15 Introduction to MESFETs
- Lec 16 Advanced concepts of GaAs MESFETs
- Lec 17 GaAs MESFET fabrication and practical aspects
- Lec 18 Practical aspects of FET design and small-signal model
- Lec 19 GaAs MESFETs: cut-off frequency and aspects of power devices
- Lec 20 GaAs MESFETs for power amplifiers
- Lec 21 Modulation doping in compound semiconductors
- Lec 22 Band diagram of MODFETs/HEMTs
- Lec 23 Design issues & methodology for microwave HEMTs
- Lec 24 Small-signal model & noise in HEMTs.
- Lec 25 The concept of pseudomorphic or pHEMTs.
- Lec 26 Multi-finger HEMTs
- Lec 27 pHEMTs for low noise and introduction to InP HEMT
- Lec DB 28 InP HEMTs for power and the concept of metamorphic HEMTs
- Lec DB 29 AlGaN/GaN HEMT: applications, structure, substrates and FOM.
- Lec DB 30 AlGaN/GaN HEMT: device basics, current collapse & passivation.
- Lec DB 31 AlGaN/GaN HEMT: gate process, field-plate and trade-offs in design.
- Lec DB 32 AlGaN/GaN HEMT: Practical aspects and commercial HEMTs.
- Lec DB 33 GaN RF HEMT on eval board, and emerging topics of research.
- Lec DB 34 Linearity in GaN HEMTs – a device perspective.
- Lec DB 35 Nanoscale MOSFETs and short channel effects.
- Lec DB 36 Parasitic resistances and capacitances in nanoscale MOSFETs.
- Lec DB 37 RF MOSFET Layout and RF Silicon-on-insulator.
- Lec DB 38 Noise in MOSFETs and Introduction to LDMOS
- Lec DB 39 Working of LDMOS and VDMOS
- Lec DB 40 LDMOS: Parasitics, and the concept of RESURF.
- Lec 41 LDMOS: HCI, snapback, finger layout and some aspects of commercial devices.
- Lec 42 BJT: common base and common emitter from the device point of view.
- Lec 43 BJT: Kirk effect, Ebers-Moll model and base transit time.
- Lec 44 BJT: small-signal model, gain and cut-off frequency.
- Lec 45 BJT: Emitter and base designs and drift transistor.
- Lec 46 Collector design in modern BJT and Introduction to HBTs.
- Lec 47 HBT: base current and collapse of the current gain.
- Lec 48 High-frequency HBT and Introduction to SiGe HBT
- Lec 49 SiGe HBT: various resistances and capacitances, scaling and aspects of BiCMOS
- Lec 50 Basics of microwave: transmission line theory.
- Lec 51 Waveguides, T-lines and introduction to 2-port networks.
- Lec 52 S-parameters and the basics of Smith Chart
- Lec 53 Smith chart and matching.
- Lec 54 Impedance matching using Smith Chart and stub line.
- Lec 55 Passives in microwave circuits.
- Lec 56 Inductors in microwave circuits.
- Lec 57 More on passive elements in microwave circuits.
- Lec 58 On-wafer measurement and S-parameters.
- Lec 59 On-wafer de-embedding.
- Lec 60 On-wafer and fixture-based measurements and calibration.
- Lec 61 More on fixtures and basic transistor concepts for power amplifiers.
- Live Session 01-04-2025