Learn · Introduction to Semiconductor Devices
Lecture 48 of 78Week 7
7.3 NMOSCAP in inversion mode
Prof. Naresh Kumar Emani · IIT Hyderabad
Credits and licence
- From
- Introduction to Semiconductor Devices, IIT Hyderabad (at NPTEL)
- Licence
- CC BY-NC-SA, as NPTEL states it. Non-commercial use only.
- Attribution
- NPTEL states: "Distributed under Creative Commons Attribution-ShareAlike / CC BY - NC - SA", beside a BY-NC-SA badge. Coordinated by IIT Madras.
- Who can watch
- Tweens profiles and older. How courses are placed
All the lectures
- 1.1 Types of Semiconductors
- 1.2 Classical Vs Quantum Mechanics
- 1.3 Electrons in infinite and finite 1D potential well
- 1.4 3D potential well model of atom and Bohr's model
- 1.5 Covalent bonds and inter-atomic interactions in Silicon
- 1.6 Energy band formation
- 1.7 Electron hole pair generation
- 1.8 Direct and Indirect bandgap semiconductors
- 1.9 Energy levels in infinite and finite potential wells (short demo)
- 2.1 Effective mass in Semiconductors
- 2.2 Intrinsic carrier density
- 2.3 Doping and extrinsic semiconductors
- 2.4 Fermi level in intrinsic semiconductors
- 2.5 Fermi level in extrinsic semiconductors
- 2.6 Temperature dependence of Fermi level
- 2.7 Charge neutrality relationship
- 2.8 Drift current and energy band representation of kinetic energy of carriers
- 3.1 Semiconductor bands in a electric field
- 3.2 Diffusion current
- 3.3 Non-uniform doping
- 3.4 Equilibrium Vs Nonequilibrium carrier response
- 3.5 Minority carrier diffusion equation (MCDE) - Example problems
- 3.6 Quasi Fermi level in nonequilibrium conditions
- 3.7 Quasi Fermi level and minority carrier diffusion length
- 3.8 Semiconductor device fabrication
- 4.1 PN Junctions - An introducton
- 4.2 PN Junction electrostatics
- 4.3 Energy band diagram of PN junction
- 4.4 Depletion width and peak electric field
- 4.5 PN junction electrostatics - examples
- 4.6 Demo of PN Junction Lab on Nanohub
- 5.1 Forward and reverse biased PN junctions
- 5.2 Minority carrier injection in PN junctions
- 5.3 Current in forward biased PN junction
- 5.4 Current in reverse biased PN junction
- 5.5 Depletion capacitance in PN junction
- 5.6 Non-idealities in PN junction diode
- 5.7 Nanohub Demo - PN Junction with applied bias
- 6.1 Schottky barrier in metal-semiconductor junction
- 6.2 Current flow across a Schottky barrier
- 6.3 Ohmic vs rectifying contacts
- 6.4 An Ideal MOS Capacitor
- 6.5 Operating regimes of a MOSCAP
- 6.6 Simplified band diagrams of accumulation and depletion in MOSCAP
- 6.7 Inversion in a MOSCAP
- 7.1 NMOSCAP in accumulation mode
- 7.2 NMOSCAP in depletion mode
- 7.3 NMOSCAP in inversion mode
- 7.4 Exact solution vs delta-depletion approximation
- 7.5 Threshold voltage in a MOSCAP
- 7.6 Nanohub Demo - MOSCAP tool
- 8.1 Non-ideal MOS Capacitor
- 8.2 MOSCAP Capacitance-Voltage (CV) Characteristics
- 8.3 Example problems with MOSCAPs
- 8.4 Impact of doping, oxide thickness and temperature on CV
- 8.5 Nanohub Demo - MOS CV
- 9.1 Introduction to MOSFET
- 9.2 Operating modes of a MOSFET
- 9.3 IV Characteristics of a long channel MOSFET
- 9.4 Example problems with MOSFETs
- 9.5 MOSFET device metrics
- 9.6 CMOS Technology
- 10.1 MOSFET Scaling and technology nodes
- 10.2 Limits of scaling
- 10.3 Current characteristics of a short channel MOSFET
- 10.4 Threshold voltage characteristics of short channel MOSFET
- 10.5 MOSFETs in the 21st century
- 11.1 Optical absorption and bandgap
- 11.2 Introduction to solar cells
- 11.3 Efficiency of a solar cell
- 11.4 Types of photodetectors
- 11.5 PIN and avalanche Photodectectors
- 11.6 Photodetector metrics
- 12.1 Radiative absoption and emission processes
- 12.2 Materials for optoelectronic devices
- 12.3 Operation of a light emitting diode (LED)
- 12.4 LED emission spectrum
- 12.5 Stimulated emission and lasing