Learn · Semiconductor Devices to Sensors: Principles, Design, and Application
Lecture 47 of 61Week 10
MOS Charge Voltage (QV) Characteristics
Prof. Mitradip Bhattacharjee · IISER Bhopal
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- Semiconductor Devices to Sensors: Principles, Design, and Application, IISER Bhopal (at NPTEL)
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- CC BY-NC-SA, as NPTEL states it. Non-commercial use only.
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- NPTEL states: "Distributed under Creative Commons Attribution-ShareAlike / CC BY - NC - SA", beside a BY-NC-SA badge. Coordinated by IIT Madras.
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All the lectures
- Introduction to Electronic Devices
- Semiconductor Technology
- Types of Semiconductor, Equilibrium, Steady State
- Particles and Waves in Semiconductor
- Electron-Hole Pair and Concept of Hole
- Energy Band Model & Comparison with Bond Model
- Fermi-Dirac Function & Boltzmann Approximation
- Expression of Intrinsic Concentration & Fermi-level
- Bond Model in Extrinsic Semiconductor
- Band Model for Extrinsic Semiconductor
- Intrinsic Temperature & Fermi-level in Extrinsic Semiconductor
- Introduction to Carrier Transport in Semiconductor
- Random Motion & Quasi-equilibrium Transport
- Numerical Problem Solving Session 1
- Numerical Problem Solving Session 2
- Mobility, Scattering, & Conductivity in Semiconductor
- Excess Carrier Generation
- Quasi Fermi Level
- Average Life-time of Carriers
- Direct and Indirect Generation and Recombination
- Expressions for Recombination Processes
- Transport and Continuity Equation
- Electronic Characterization Instruments - Lab Session 1
- Electronic Characterization Instruments - Lab Session 2
- Numerical Problem Solving Session 3
- Characterization and Experiment with LDR - Lab Session 3
- Characterization and Experiment with Solar Cell - Lab Session 4
- Approximations in Device Analysis
- PN Junction Device Structure/Fabrication
- Equilibrium Carrier Concentration in PN Junction
- Built-in Electric Field & Potential - PN Junction
- Band-diagram in Equilibrium PN Junction
- Band-diagram in Forward Bias PN Junction
- PN Junction- Reverse Bias and Breakdown
- PN Junction - Small Signal Model and Diode Capacitance
- Characterization and Experiment with PN Junction - Lab Session 5
- Characterization and Experiment with Temperature Sensor - Lab Session 6
- Characterization and Experiment with LED - Lab Session 7
- Numerical Problem Solving Session 4
- Numerical Problem Solving Session 5
- Introduction to BJT and Transistor Action
- BJT Small Signal Analysis, Base width Modulation
- BJT Circuits and Output Characteristics
- BJT Breakdown and Input Characteristics
- Characterization and Experiment with BJT - Lab Session 8
- MOS - Accumulation, Depletion, Inversion
- MOS Charge Voltage (QV) Characteristics
- MOS Energy Band & Capacitance-Voltage Characteristics
- Body Effect in MOS Capacitor
- Numerical Problem Solving Session 6
- MOSFET Device Structure & Fabrication
- MOSFET Operation and Channel Length Modulation
- MOSFET Device Characteristics & Equations
- Numerical Problem Solving Session 7
- Numerical Problem Solving Session 8
- Characterization and Experiment with MOSFET - Lab Session 9
- Characterization and Experiment with Gr-FET - Lab Session 10
- Introduction to Microcontroller Boards
- Numerical Problem Solving Session 9
- Common Questions
- Summary