Learn · The MOS Transistor Modeling
Lecture 37 of 60Week 8
Lecture -37 : Extrinsic Effects, P channel Transistor
Prof. Navjeet Bagga · IIT Bhubaneswar
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- The MOS Transistor Modeling, IIT Bhubaneswar (at NPTEL)
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All the lectures
- Lecture -1 : Introduction
- Lecture -2 : Fundamentals Of Semiconductor
- Lecture -3 : Carrier Transport
- Lecture -4 : PN Junction -I
- Lecture -5 : PN Junction -II
- Lecture -6 : Flat Band Voltage
- Lecture -7 : Potential & Charge Balance
- Lecture -8 : Effect of Gate-Body Voltage on MOS Capacitor
- Lecture -9 : General Analysis - I
- Lecture -10 : General Analysis - II
- Lecture -11 : Region of Operation (Accumulation & Depletion)
- Lecture -12 : Region of Operation (Inversion – I)
- Lecture -13 : Region of Operation (Inversion –II)
- Lecture-14 : Region of Operation (Inversion –III)
- Lecture -15 : Small Signal Capacitance - I
- Lecture -16 : Small Signal Capacitance-II
- Lecture -17 : Small Signal Capacitance-III
- Lecture -18 : Contacting Inversion Layer using Third Terminal
- Lecture -19 : General Analysis - I
- Lecture -20 : General Analysis - II
- Lecture -21 : The Body Effect
- Lecture -22 : A VCB Control point of View
- Lecture -23 : Introduction of MOS Transistor
- Lecture -24 : Complete All Region Model - I
- Lecture -25 : Complete All Region Model - II
- Lecture -26 : A Graphical Interpretation
- Lecture -27 : Simplified All Region Models - I
- Lecture -28 : Simplified All Region Models - II
- Lecture -29 :Simplified All Region Models - III
- Lecture -30 : Strong Inversion - I
- Lecture - 31 : Strong Inversion - II
- Lecture -32 : Strong Inversion - III
- Lecture -33 : Weak Inversion
- Lecture -34 : Single Piece Model
- Lecture -35 : Effective Mobility - I
- Lecture -36 : Effective Mobility - II
- Lecture -37 : Extrinsic Effects, P channel Transistor
- Lecture -38 : Carrier Velocity Saturation-I
- Lecture -39 : Carrier Velocity Saturation-II
- Lecture -40 : Channel Length Modulation
- Lecture - 41 : Charge Sharing-I
- Lecture - 42 : Charge Sharing-II
- Lecture - 43 : Drain-Induced Barrier Lowering
- Lecture - 44 : Hot Carrier Effects
- Lecture - 45 : Polysilicon Depletion
- Lecture -46 : DC Gate Current
- Lecture -47 : Band to Band Tunneling; GIDL
- Lecture -48 : The Quest for Ever-Smaller Devices
- Lecture -49 : Quasi-Static Operation
- Lecture -50 : Intrinsic Charges in Quasi-Static Operation - I
- Lecture -51 : Intrinsic Charges in Quasi-Static Operation - II
- Lecture -52 : Transit Time, Limitation of Quasi-static model
- Lecture -53 : Non-Quasi-Static Modeling
- Lecture -54 : A Low-Frequency Small-Signal Model Part : I
- Lecture -55 : A Low-Frequency Small-Signal Model Part : II
- Lecture -56 : A Low-Frequency Small-Signal Model Part : III
- Lecture -57 : A Medium Frequency Small-Signal Model Part : I
- Lecture -58 : A Medium Frequency Small-Signal Model Part : II
- Lecture -59 : A Medium Frequency Small-Signal Model Part : III
- Lecture -60 : A Few Case Studies